ss2412 cmos high sensitivity micropower hall latch 1 v 3.1 0 nov 1 , 20 1 3 features and benefits ? micropower consumption for battery pow- ered ap plications ? latching output ? operation down to 2.5v ? high sensitivity for direct reed switch r e- placement applications ? chopper stabilized amplif ier stage application examples ? solid state switch ? handheld wireless handset awake switch ? lid close sensor for battery powered devices 3 pin sot23 (suffix so) 3 pin sip (suffix ua) functional block diagram v dd out sleep/awake li chopper hall gnd
ss2412 cmos high sensitivity micropower hall latch 2 v 3.1 0 nov 1 , 20 1 3 general description the ss2412 latching hall effect sensor ic is fabr i- cated fr om mixed signal cmos technology . it inco r- porates advanced chopper - stabilization techniques to provide accurate and stable magnetic switch points. the circuit design provides an internally controlled clocking mechanism to cycle power to the hall el e- ment and analog signal processing circuits. this serves to place the high current - consuming portions of the circuit int o a ?sleep? mode. periodically the device is ?awakened? by this internal logic and the magnetic flux from the hall element is evaluated a gainst the predefined thresholds. this device r e- quires the presence of both south and north polarity magnetic fields fo r operation. in the presence of a south polarity field of sufficient strength, the device output latches on, and only switches off when a north polarity field of sufficient strength is present. while in the ?sleep? cycle t he output transistor is latched in its previous state. the design has been o p- timized for service in applications requiring extended operating lifetime in battery powered systems. glossary of terms millitesla (mt) , gauss units of magnetic flux density: 1mt = 10 gauss rohs restriction of hazardous substances operating point (b op ) magnetic flux density applied on the branded side of the package which turns the output driver on (v out = v dson ) release point (b rp ) magnetic flux density applied on the branded side of the package w hich turns the output driver off (v out = high)
ss2412 cmos high sensitivity micropower hall latch 3 v 3.1 0 nov 1 , 20 1 3 pin definitions and descriptions sot p i n sip pi n na m e t y pe f un c t i o n 1 1 v dd s upply s upply v oltage p in 2 3 out output open d r ain output p in 3 2 gnd g r ound g r ound p in internal timing circuit absolute maximum ratings p ar am eter s y m b ol v al ue un i ts s upply v oltage v dd 6 v s upply cu rr ent i dd 50 m a output v o ltage v o ut 28 v output cu rr ent i o ut 50 m a operating temperature range t a - 40 to 150 c s to r age t e m pe r atu r e range t s - 50 to 160 c esd sensitivity 4000 v awake taw:120 s sleep tsl:70ms time current 0 i sp i aw i avg sample & ou t- put latched period
ss2412 cmos high sensitivity micropower hall latch 4 v 3.1 0 nov 1 , 20 1 3 operating temperature range symbol value units temperature suffix ?e? t a - 40 to 85 c temperature suffix ? k ? t a - 40 to 125 c temperature suffix ?l? t a - 40 to 150 c e xc eed i ng t he ab s o l ute m a x i m u m r at i ngs m a y c a us e pe r m anent da m age. e xpo s ur e to ab s o l ute - m a xi m u m - r ated c o ndi t i o ns f or e x- ten ded pe r i o ds m a y a ff e c t de v i c e r e l i a bi l i t y . general electrical specifications dc o pe r a t i n g p a ra m ete r s t a = 25 c , v dd = 2.75v p ar am eter s y m b o l t e s t cond i t i ons m i n t y p max un i ts supply voltage v dd operating 2.5 3 5.5 v supply current i dd average 5 a output current i out 1.0 ma saturation voltage v sat i out =1ma 0.4 v awake mode time t aw operating 175 s sleep mode time t sl operating 70 ms magnetic specifications dc operating parameters v dd = 2 . 5 to 5.5 v (unless otherwise specified) pa ckage parameter symbol test conditions min typ max units ua operating point b op ta=25c v dd = 2.75 v dc 5 30 60 g release point b rp - 60 - 30 - 5 g hysteresis b hyst 60 g so operating point b op ta=25c v dd = 2.75 v dc - 60 - 30 - 5 g release point b rp 5 30 60 g hysteresis b hyst 60 g
ss2412 cmos high sensitivity micropower hall latch 5 v 3.1 0 nov 1 , 20 1 3 output behavior versus magnetic pole dc operating parameters ta = - 40 c to 150 c , v dd = 2. 5 to 5.5 v (unless otherwise specified) test conditions (ua) test conditions (so) out b < b rp b > b rp high b > b op b < b op low the sot - 23 device is reversed from the ua pack age. the sot - 23 output transistor will be turned on (drops low) in the presence of a sufficiently strong north pole magnetic field applied to the marked face and turned off(hoists high) in the presence of a sufficiently strong south pole magnetic field . unique features cmos hall ic technology the chopper stabilized amplifier uses switched capacitor technique s to eliminate the amplifier offset voltage, which, in bipolar devices, is a major source of temperature sensitive drift. cmos makes this advanced technique possible. the cmos chip is also much smaller than a bipolar chip, allowing very sophisticated circu itry to be placed in less space. the small chip size also contributes to lower physical stress and less power consumption. esd protection human body model (hbm) tests according to: mil. std. 883f method 3015.7 parameter symbol limit values unit notes min max esd voltage vesd 4 kv esd precautions electronic semiconductor products are sensitive to electro static discharge (esd). always observe electro static discharge control procedures whenever handling semiconductor products.
ss2412 cmos high sensitivity micropower hall latch 6 v 3.1 0 nov 1 , 20 1 3 package i nformation package to 92 3- pin sip: 4.0 0.01 1 2 3 1.27 2.13 1.87 1.00 1.20 45 1 1.52 0.1 3 1 0.75 0.05 3.0 0.01 0.44 0.01 0.05 0.0 1 1.6. 0.1 0.84(nom) 3 1 6 1 6 1 3 1 14 .5 1 active area depth: sensor location 1 2 3 notes: 1). controlling dimension : mm ; 2). le a ds must be free of flash and plating voids ; 3). do not bend leads within 1 mm of lead to package interface ; 4). pinout: pin 1 v dd pin 2 gnd pin 3 output 0.39 0.01 0.38 0.01 2.54
ss2412 cmos high sensitivity micropower hall latch 7 v 3.1 0 nov 1 , 20 1 3 package 3- pin sot - 23 sot - 23 package hall location : 0.56 0.66 0.95 1.50 chip 3 2 1 bottom view of sot - 23 package 2.70 3.10 1.00 1.30 0.70 0.90 0.00 0.10 0.35 0.50 0.10 0.25 0.20 min 2.60 3.00 1.50 1.80 1.70 2.10 3 2 1 top view side view end view notes: 1. pinout: pin 1 v dd pin 2 output pin 3 gnd 2. all dimensions are in millimeters ;
ss2412 cmos high sensitivity micropower hall latch 8 v 3.1 0 nov 1 , 20 1 3 package 3- pin t sot - 23 t sot - 23 package hall location : 0. 3 6 0. 4 6 0.95 1.50 chip 3 2 1 bottom view of t sot - 23 package 2. 82 3. 02 0. 70 0. 90 0.70 0. 80 0.00 0.10 0.35 0.50 0. 0 8 0.2 0 0.20 m in 2.6 5 2. 95 1. 6 0 1. 7 0 1.70 2.10 3 2 1 top side vie end notes 1). pinout: pin 1 v dd pin 2 output pin 3 gnd 2). all dimensions are in millimeters;
ss2412 cmos high sensitivity micropower hall latch 9 v 3.1 0 nov 1 , 20 1 3 ordering information part no. pb - free temperature code package code packing ss2412 esot yes - 40c to 85c sot - 23 7- in. reel, 3000 pieces/ reel ss2412 es t t yes - 40c to 85c t sot - 23 7- in. reel, 3000 pieces/ reel ss2412 eua yes - 40c to 85c to - 92 bulk, 1000 pieces/ bag ss2412 ksot yes - 40c to 125c sot - 23 7- in. reel, 3000 pieces/ reel ss2412 ks t t yes - 40c to 125c t sot - 23 7- in. reel, 3000 pieces/ reel ss2412 kua yes - 40c to 125c to - 92 bulk, 1000 pieces/ bag ss2412 lsot yes - 40c to 150c sot - 23 7- in. reel, 3000 pieces/ reel ss2412 ls t t yes - 40c to 150c t sot - 23 7- in. reel, 3000 pieces/ reel ss2412 lua yes - 40c to 150c to - 92 bulk, 1000 pieces/ bag
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